Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
100V
Tip pachet
PowerFLAT
Serie
STripFET H7
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
16.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Latime
6.35 mm
Inaltime
0.95mm
Lungime
5.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 4,10
€ 0,82 Buc. (Livrat pe rola) (fara TVA)
€ 4,96
€ 0,992 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 4,10
€ 0,82 Buc. (Livrat pe rola) (fara TVA)
€ 4,96
€ 0,992 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
60A
Maximum Drain Source Voltage Vds
100V
Tip pachet
PowerFLAT
Serie
STripFET H7
Montare
Surface
Numar pini
8
Maximum Drain Source Resistance Rds
16.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
5W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
25nC
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Latime
6.35 mm
Inaltime
0.95mm
Lungime
5.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


