Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serie
MDmesh K5, SuperMESH5
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.95mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Standard
5
P.O.A.
Each (Supplied as a Tape) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
800 V
Serie
MDmesh K5, SuperMESH5
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
5.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.35mm
Typical Gate Charge @ Vgs
10.5 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.95mm
Temperatura minima de lucru
-55 °C
Detalii produs


