Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 5,58
€ 2,79 Buc. (Livrat pe rola) (fara TVA)
€ 6,75
€ 3,376 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
2
€ 5,58
€ 2,79 Buc. (Livrat pe rola) (fara TVA)
€ 6,75
€ 3,376 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
2
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
710 V
Serie
MDmesh M5
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Latime
6.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
5.4mm
Typical Gate Charge @ Vgs
31 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
1mm
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


