Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
60 V
Serie
STripFET F7
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Latime
5.2mm
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
€ 10,00
€ 2,00 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,10
€ 2,42 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 10,00
€ 2,00 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,10
€ 2,42 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 5 | € 2,00 | € 10,00 |
| 10+ | € 1,88 | € 9,40 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
60 V
Serie
STripFET F7
Tip pachet
PowerFLAT 5 x 6
Timp montare
Surface Mount
Numar pini
8
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.15mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Transistor Material
Si
Latime
5.2mm
Inaltime
0.95mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Detalii produs
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


