Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
H2PAK-2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Latime
15.8mm
Transistor Material
Si
Inaltime
4.8mm
Detalii produs
N-Channel MDmesh™, 800V/1500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
€ 5,58
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,64
Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 5,58
Buc. (Intr-un pachet de 2) (fara TVA)
€ 6,64
Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
Cumpara in pachete mari
Cantitate | Pret unitar | Per Pachet |
---|---|---|
2 - 8 | € 5,58 | € 11,16 |
10 - 18 | € 5,05 | € 10,10 |
20 - 48 | € 4,74 | € 9,48 |
50 - 98 | € 4,42 | € 8,84 |
100+ | € 4,17 | € 8,34 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
1500 V
Serie
MDmesh
Tip pachet
H2PAK-2
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
9 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
140 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
29.3 nC @ 10 V
Latime
15.8mm
Transistor Material
Si
Inaltime
4.8mm
Detalii produs