Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
H2PAK
Series
DeepGate, STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
4.8mm
Lungime
10.4mm
Standards/Approvals
No
Latime
10.57mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 7,80
€ 3,90 Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,44
€ 4,719 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 7,80
€ 3,90 Buc. (Intr-un pachet de 2) (fara TVA)
€ 9,44
€ 4,719 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 3,90 | € 7,80 |
| 20 - 98 | € 3,37 | € 6,74 |
| 100 - 198 | € 2,98 | € 5,96 |
| 200+ | € 2,53 | € 5,06 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Tip pachet
H2PAK
Series
DeepGate, STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Inaltime
4.8mm
Lungime
10.4mm
Standards/Approvals
No
Latime
10.57mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.