Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220FP
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
60 nC @ 10 V
Latime
4.6mm
Inaltime
16.4mm
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 6,02
€ 6,02 Each (Supplied in a Tube) (fara TVA)
€ 7,28
€ 7,28 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
1
€ 6,02
€ 6,02 Each (Supplied in a Tube) (fara TVA)
€ 7,28
€ 7,28 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
1
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
600 V
Tip pachet
TO-220FP
Serie
MDmesh
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
165 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Typical Gate Charge @ Vgs
60 nC @ 10 V
Latime
4.6mm
Inaltime
16.4mm
Detalii produs


