Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.4mm
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 55,50
€ 1,11 Each (In a Tube of 50) (fara TVA)
€ 67,16
€ 1,343 Each (In a Tube of 50) (cu TVA)
50
€ 55,50
€ 1,11 Each (In a Tube of 50) (fara TVA)
€ 67,16
€ 1,343 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,11 | € 55,50 |
| 100 - 200 | € 0,82 | € 41,00 |
| 250+ | € 0,77 | € 38,50 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
TO-220FP
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Latime
4.6mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
24 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
16.4mm
Detalii produs


