Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220FP
Serie
MDmesh M5
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
€ 11,70
€ 5,85 Buc. (Intr-un pachet de 2) (fara TVA)
€ 14,16
€ 7,078 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 11,70
€ 5,85 Buc. (Intr-un pachet de 2) (fara TVA)
€ 14,16
€ 7,078 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 8 | € 5,85 | € 11,70 |
| 10 - 18 | € 5,56 | € 11,12 |
| 20 - 48 | € 5,01 | € 10,02 |
| 50 - 98 | € 15,00 | € 30,00 |
| 100+ | € 14,74 | € 29,48 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Tip pachet
TO-220FP
Serie
MDmesh M5
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
299 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Typical Gate Charge @ Vgs
31 nC @ 10 V
Latime
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.4mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.3mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


