Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
710 V
Tip pachet
TO-220FP
Serie
MDmesh M5
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.6mm
Inaltime
16.4mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 55,50
€ 1,11 Each (In a Tube of 50) (fara TVA)
€ 67,16
€ 1,343 Each (In a Tube of 50) (cu TVA)
50
€ 55,50
€ 1,11 Each (In a Tube of 50) (fara TVA)
€ 67,16
€ 1,343 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
710 V
Tip pachet
TO-220FP
Serie
MDmesh M5
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
340 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Lungime
10.4mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+150 °C
Number of Elements per Chip
1
Latime
4.6mm
Inaltime
16.4mm
Tara de origine
China
Detalii produs
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


