Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Serie
MDmesh
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Inaltime
16.4mm
Detalii produs
N-Channel MDmesh™, 500V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 84,00
€ 1,68 Each (In a Tube of 50) (fara TVA)
€ 101,64
€ 2,033 Each (In a Tube of 50) (cu TVA)
50
€ 84,00
€ 1,68 Each (In a Tube of 50) (fara TVA)
€ 101,64
€ 2,033 Each (In a Tube of 50) (cu TVA)
Informatii despre stoc temporar indisponibile
50
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Tub |
|---|---|---|
| 50 - 50 | € 1,68 | € 84,00 |
| 100 - 200 | € 1,35 | € 67,50 |
| 250+ | € 1,20 | € 60,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
500 V
Serie
MDmesh
Tip pachet
TO-220FP
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
320 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Latime
4.6mm
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
27 nC @ 10 V
Transistor Material
Si
Inaltime
16.4mm
Detalii produs


