Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220FP
Serie
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
±25 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Power Dissipation Pd
25W
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Inaltime
16.4mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 15,50
€ 1,55 Each (Supplied in a Tube) (fara TVA)
€ 18,76
€ 1,88 Each (Supplied in a Tube) (cu TVA)
Impachetare pentru productie (Tub)
10
€ 15,50
€ 1,55 Each (Supplied in a Tube) (fara TVA)
€ 18,76
€ 1,88 Each (Supplied in a Tube) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Tub)
10
| Cantitate | Pret unitar |
|---|---|
| 10 - 99 | € 1,55 |
| 100 - 499 | € 1,22 |
| 500 - 999 | € 1,08 |
| 1000+ | € 0,89 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Tip pachet
TO-220FP
Serie
MDmesh
Montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
±25 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
30nC
Maximum Power Dissipation Pd
25W
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
150°C
Latime
4.6 mm
Inaltime
16.4mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs


