Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Serie
MDmesh, SuperMESH
Tip pachet
ISOTOP
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Latime
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
38.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.1mm
Temperatura minima de lucru
-65 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 37,88
€ 37,88 Buc. (fara TVA)
€ 45,83
€ 45,83 Buc. (cu TVA)
1
€ 37,88
€ 37,88 Buc. (fara TVA)
€ 45,83
€ 45,83 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 9 | € 37,88 |
| 10 - 49 | € 34,62 |
| 50 - 99 | € 32,72 |
| 100 - 199 | € 28,57 |
| 200+ | € 26,41 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
53 A
Maximum Drain Source Voltage
500 V
Serie
MDmesh, SuperMESH
Tip pachet
ISOTOP
Timp montare
Screw Mount
Numar pini
4
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
460 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
310 nC @ 10 V
Latime
25.5mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
38.2mm
Temperatura maxima de lucru
+150 °C
Inaltime
9.1mm
Temperatura minima de lucru
-65 °C
Detalii produs


