Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Serie
MDmesh, SuperMESH
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1.575,00
€ 0,63 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.874,25
€ 0,75 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.575,00
€ 0,63 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.874,25
€ 0,75 Buc. (Pe o rola de 2500) (cu TVA)
2500
Informatii indisponibile despre stoc
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
2500 - 2500 | € 0,63 | € 1.575,00 |
5000+ | € 0,57 | € 1.425,00 |
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
400 V
Serie
MDmesh, SuperMESH
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Latime
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs