Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-252
Serie
STripFET F3
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 10,40
€ 2,08 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,58
€ 2,517 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 10,40
€ 2,08 Buc. (Intr-un pachet de 5) (fara TVA)
€ 12,58
€ 2,517 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
55V
Tip pachet
TO-252
Serie
STripFET F3
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8.5mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
33.5nC
Maximum Power Dissipation Pd
110W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


