Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.2A
Maximum Drain Source Voltage Vds
1kV
Tip pachet
TO-252
Series
MDmesh, SuperMESH
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
6.8Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
30 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
18nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii produs
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 14,20
€ 2,84 Buc. (Intr-un pachet de 5) (fara TVA)
€ 17,18
€ 3,436 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 14,20
€ 2,84 Buc. (Intr-un pachet de 5) (fara TVA)
€ 17,18
€ 3,436 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 5 | € 2,84 | € 14,20 |
| 10+ | € 2,67 | € 13,35 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2.2A
Maximum Drain Source Voltage Vds
1kV
Tip pachet
TO-252
Series
MDmesh, SuperMESH
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
6.8Ω
Channel Mode
Enhancement
Maximum Power Dissipation Pd
90W
Maximum Gate Source Voltage Vgs
30 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
18nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
150°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
AEC-Q101
Tara de origine
China
Detalii produs


