Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.2mm
Lungime
6.6mm
Typical Gate Charge @ Vgs
44.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1.400,00
€ 0,56 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.694,00
€ 0,678 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.400,00
€ 0,56 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.694,00
€ 0,678 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
6.2mm
Lungime
6.6mm
Typical Gate Charge @ Vgs
44.5 nC @ 10 V
Transistor Material
Si
Temperatura maxima de lucru
+175 °C
Number of Elements per Chip
1
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


