Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.6mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Latime
6.2mm
Transistor Material
Si
Serie
MDmesh K5, SuperMESH5
Temperatura minima de lucru
-55 °C
Inaltime
2.4mm
Detalii produs
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
800 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
6.6mm
Typical Gate Charge @ Vgs
9.5 nC @ 10 V
Latime
6.2mm
Transistor Material
Si
Serie
MDmesh K5, SuperMESH5
Temperatura minima de lucru
-55 °C
Inaltime
2.4mm
Detalii produs


