Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TO-252
Serie
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Lungime
6.6mm
Standards/Approvals
No
Inaltime
2.4mm
Latime
6.2 mm
Automotive Standard
No
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 9,50
€ 0,95 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,50
€ 1,15 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 9,50
€ 0,95 Buc. (Intr-un pachet de 10) (fara TVA)
€ 11,50
€ 1,15 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 10 | € 0,95 | € 9,50 |
| 20+ | € 0,90 | € 9,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type P
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TO-252
Serie
STripFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
45mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
12nC
Maximum Power Dissipation Pd
40W
Maximum Gate Source Voltage Vgs
20 V
Forward Voltage Vf
1.1V
Temperatura maxima de lucru
175°C
Lungime
6.6mm
Standards/Approvals
No
Inaltime
2.4mm
Latime
6.2 mm
Automotive Standard
No
Detalii produs
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


