Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Latime
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 17,40
€ 1,74 Buc. (Livrat pe rola) (fara TVA)
€ 21,05
€ 2,105 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 17,40
€ 1,74 Buc. (Livrat pe rola) (fara TVA)
€ 21,05
€ 2,105 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
125 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
28 nC @ 10 V
Latime
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Temperatura maxima de lucru
+175 °C
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs


