Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 1.450,00
€ 0,58 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.754,50
€ 0,702 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.450,00
€ 0,58 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.754,50
€ 0,702 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs


