Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1.450,00
€ 0,58 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.754,50
€ 0,702 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.450,00
€ 0,58 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.754,50
€ 0,702 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
60 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Latime
6.2mm
Transistor Material
Si
Inaltime
2.4mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


