Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Latime
6.2mm
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 5,40
€ 0,54 Buc. (Livrat pe rola) (fara TVA)
€ 6,53
€ 0,653 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
10
€ 5,40
€ 0,54 Buc. (Livrat pe rola) (fara TVA)
€ 6,53
€ 0,653 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Serie
STripFET
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Lungime
6.6mm
Temperatura maxima de lucru
+175 °C
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Latime
6.2mm
Inaltime
2.4mm
Temperatura minima de lucru
-55 °C
Detalii produs


