Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Serie
STripFET
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Transistor Material
Si
Latime
6.2mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.4mm
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 1.250,00
€ 0,50 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.512,50
€ 0,605 Buc. (Pe o rola de 2500) (cu TVA)
2500
€ 1.250,00
€ 0,50 Buc. (Pe o rola de 2500) (fara TVA)
€ 1.512,50
€ 0,605 Buc. (Pe o rola de 2500) (cu TVA)
Informatii despre stoc temporar indisponibile
2500
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
100 V
Tip pachet
DPAK (TO-252)
Serie
STripFET
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
130 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Lungime
6.6mm
Typical Gate Charge @ Vgs
15.3 nC @ 10 V
Transistor Material
Si
Latime
6.2mm
Temperatura maxima de lucru
+175 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
2.4mm
Detalii produs


