Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Serie
STripFET H7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 9,25
€ 1,85 Buc. (Livrat pe rola) (fara TVA)
€ 11,19
€ 2,238 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 9,25
€ 1,85 Buc. (Livrat pe rola) (fara TVA)
€ 11,19
€ 2,238 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-252
Serie
STripFET H7
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
120W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
61nC
Forward Voltage Vf
1.2V
Temperatura maxima de lucru
175°C
Latime
6.2 mm
Inaltime
2.4mm
Lungime
6.6mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


