Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm
€ 18,60
€ 3,72 Buc. (Intr-un pachet de 5) (fara TVA)
€ 22,51
€ 4,501 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 18,60
€ 3,72 Buc. (Intr-un pachet de 5) (fara TVA)
€ 22,51
€ 4,501 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 20 | € 3,72 | € 18,60 |
| 25 - 45 | € 3,46 | € 17,30 |
| 50 - 120 | € 3,24 | € 16,20 |
| 125 - 245 | € 3,03 | € 15,15 |
| 250+ | € 2,86 | € 14,30 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
55 V
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
6.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
142 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm


