Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 6,92
€ 3,46 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,37
€ 4,187 Buc. (Intr-un pachet de 2) (cu TVA)
Standard
2
€ 6,92
€ 3,46 Buc. (Intr-un pachet de 2) (fara TVA)
€ 8,37
€ 4,187 Buc. (Intr-un pachet de 2) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
2
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 2 - 18 | € 3,46 | € 6,92 |
| 20 - 98 | € 2,11 | € 4,22 |
| 100 - 198 | € 1,60 | € 3,20 |
| 200+ | € 1,42 | € 2,84 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
15mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
300W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
135nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.