Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 9,85
€ 1,97 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,92
€ 2,384 Buc. (Intr-un pachet de 5) (cu TVA)
Standard
5
€ 9,85
€ 1,97 Buc. (Intr-un pachet de 5) (fara TVA)
€ 11,92
€ 2,384 Buc. (Intr-un pachet de 5) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
5
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 5 - 5 | € 1,97 | € 9,85 |
| 10+ | € 1,84 | € 9,20 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
60V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
20mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
95W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
27nC
Forward Voltage Vf
1.6V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.75mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


