Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serie
STripFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Latime
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.75mm
Temperatura maxima de lucru
+175 °C
Inaltime
4.6mm
Temperatura minima de lucru
-55 °C
Detalii produs
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 3,84
€ 3,84 Buc. (Livrat pe rola) (fara TVA)
€ 4,65
€ 4,65 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
1
€ 3,84
€ 3,84 Buc. (Livrat pe rola) (fara TVA)
€ 4,65
€ 4,65 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
1
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
75 V
Serie
STripFET
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
85 nC @ 10 V
Latime
10.4mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
10.75mm
Temperatura maxima de lucru
+175 °C
Inaltime
4.6mm
Temperatura minima de lucru
-55 °C
Detalii produs


