Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-263
Series
STripFET F3
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
310W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
9.35 mm
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 5,96
€ 1,49 Buc. (Livrat pe rola) (fara TVA)
€ 7,21
€ 1,803 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
4
€ 5,96
€ 1,49 Buc. (Livrat pe rola) (fara TVA)
€ 7,21
€ 1,803 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
4
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
75V
Tip pachet
TO-263
Series
STripFET F3
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
8mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
310W
Maximum Gate Source Voltage Vgs
20 V
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
160nC
Forward Voltage Vf
1.5V
Temperatura maxima de lucru
175°C
Latime
9.35 mm
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Automotive Standard
No
Detalii produs
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


