Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm
Informatii despre stoc temporar indisponibile
€ 1.960,00
€ 1,96 Buc. (Pe o rola de 1000) (fara TVA)
€ 2.371,60
€ 2,372 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 1.960,00
€ 1,96 Buc. (Pe o rola de 1000) (fara TVA)
€ 2.371,60
€ 2,372 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Tip pachet
D2PAK (TO-263)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Latime
9.35mm
Lungime
10.4mm
Typical Gate Charge @ Vgs
28 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-65 °C
Forward Diode Voltage
1.5V
Inaltime
4.37mm


