Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
Informatii despre stoc temporar indisponibile
€ 48,20
€ 2,41 Buc. (Livrat pe rola) (fara TVA)
€ 58,32
€ 2,916 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 48,20
€ 2,41 Buc. (Livrat pe rola) (fara TVA)
€ 58,32
€ 2,916 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
20
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 20 - 98 | € 2,41 | € 4,82 |
| 100 - 198 | € 1,82 | € 3,64 |
| 200+ | € 1,61 | € 3,22 |
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
N
Maximum Continuous Drain Current Id
120A
Maximum Drain Source Voltage Vds
100V
Tip pachet
TO-263
Series
STripFET II
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
10.5mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
312W
Temperatura minima de lucru
-55°C
Typical Gate Charge Qg @ Vgs
172nC
Maximum Gate Source Voltage Vgs
-20, +20V
Forward Voltage Vf
1.3V
Temperatura maxima de lucru
175°C
Inaltime
4.6mm
Lungime
10.4mm
Standards/Approvals
No
Latime
9.35mm
Automotive Standard
No
Detalii Produs
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.