Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
26.67mm
Temperatura maxima de lucru
+200 °C
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 83,16
€ 83,16 Buc. (fara TVA)
€ 100,62
€ 100,62 Buc. (cu TVA)
Standard
1
€ 83,16
€ 83,16 Buc. (fara TVA)
€ 100,62
€ 100,62 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
| Cantitate | Pret unitar |
|---|---|
| 1 - 4 | € 83,16 |
| 5 - 9 | € 80,73 |
| 10+ | € 77,49 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
125 V
Tip pachet
M174
Timp montare
Surface Mount
Numar pini
4
Channel Mode
Enhancement
Maximum Power Dissipation
389 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
24.89mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
26.67mm
Temperatura maxima de lucru
+200 °C
Inaltime
4.11mm
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


