Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK
Serie
SCT
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
420W
Maximum Gate Source Voltage Vgs
22 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
162nC
Forward Voltage Vf
2.8V
Temperatura maxima de lucru
200°C
Latime
5.15 mm
Inaltime
34.95mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No
Informatii despre stoc temporar indisponibile
€ 859,20
€ 28,64 Each (In a Tube of 30) (fara TVA)
€ 1.039,63
€ 34,654 Each (In a Tube of 30) (cu TVA)
30
€ 859,20
€ 28,64 Each (In a Tube of 30) (fara TVA)
€ 1.039,63
€ 34,654 Each (In a Tube of 30) (cu TVA)
Informatii despre stoc temporar indisponibile
30
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
100A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK
Serie
SCT
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
0.105Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
420W
Maximum Gate Source Voltage Vgs
22 V
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
162nC
Forward Voltage Vf
2.8V
Temperatura maxima de lucru
200°C
Latime
5.15 mm
Inaltime
34.95mm
Lungime
15.75mm
Standards/Approvals
No
Automotive Standard
No


