Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Serie
SCTH90
Tip pachet
H2PAK
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Power Dissipation Pd
484W
Maximum Gate Source Voltage Vgs
22 V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Standards/Approvals
No
Latime
4.8 mm
Lungime
15.25mm
Automotive Standard
No
Informatii despre stoc temporar indisponibile
€ 26,01
€ 26,01 Buc. (fara TVA)
€ 31,47
€ 31,47 Buc. (cu TVA)
Standard
1
€ 26,01
€ 26,01 Buc. (fara TVA)
€ 31,47
€ 31,47 Buc. (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
1
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
116A
Maximum Drain Source Voltage Vds
650V
Serie
SCTH90
Tip pachet
H2PAK
Montare
Surface
Numar pini
7
Maximum Drain Source Resistance Rds
24mΩ
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
157nC
Maximum Power Dissipation Pd
484W
Maximum Gate Source Voltage Vgs
22 V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Standards/Approvals
No
Latime
4.8 mm
Lungime
15.25mm
Automotive Standard
No


