Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK-2
Series
SiC MOSFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Lungime
15.8mm
Standards/Approvals
No
Latime
4.7mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Informatii despre stoc temporar indisponibile
€ 11.310,00
€ 11,31 Buc. (Pe o rola de 1000) (fara TVA)
€ 13.685,10
€ 13,685 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 11.310,00
€ 11,31 Buc. (Pe o rola de 1000) (fara TVA)
€ 13.685,10
€ 13,685 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
20A
Maximum Drain Source Voltage Vds
1200V
Tip pachet
H2PAK-2
Series
SiC MOSFET
Montare
Surface
Numar pini
3
Maximum Drain Source Resistance Rds
203mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
150W
Frecventa minima de auto-rezonanta
-55°C
Typical Gate Charge Qg @ Vgs
45nC
Maximum Gate Source Voltage Vgs
25V
Temperatura maxima de lucru
175°C
Inaltime
10.4mm
Lungime
15.8mm
Standards/Approvals
No
Latime
4.7mm
Automotive Standard
No
Detalii Produs
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.
Inspiră. Proiectează. Colaborează
ÎNSCRIE-TE GRATIS
Fara taxe ascunse!
