Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
H2PAK-7
Serie
SCT
Montare
Through Hole
Numar pini
7
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
79.4nC
Maximum Power Dissipation Pd
385W
Maximum Gate Source Voltage Vgs
22 V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
75°C
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China
Informatii despre stoc temporar indisponibile
€ 23.990,00
€ 23,99 Buc. (Pe o rola de 1000) (fara TVA)
€ 29.027,90
€ 29,028 Buc. (Pe o rola de 1000) (cu TVA)
1000
€ 23.990,00
€ 23,99 Buc. (Pe o rola de 1000) (fara TVA)
€ 29.027,90
€ 29,028 Buc. (Pe o rola de 1000) (cu TVA)
Informatii despre stoc temporar indisponibile
1000
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
55A
Maximum Drain Source Voltage Vds
650V
Tip pachet
H2PAK-7
Serie
SCT
Montare
Through Hole
Numar pini
7
Maximum Drain Source Resistance Rds
27mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
79.4nC
Maximum Power Dissipation Pd
385W
Maximum Gate Source Voltage Vgs
22 V
Frecventa minima de auto-rezonanta
-55°C
Temperatura maxima de lucru
75°C
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Tara de origine
China


