Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Latime
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.6mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.44mm
Typical Power Gain
17 dB
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Standard
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
Informatii despre stoc temporar indisponibile
Standard
5
Informatii despre stoc temporar indisponibile
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Tip pachet
SOT-89
Timp montare
Surface Mount
Numar pini
3
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Maximum Power Dissipation
6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-0.5 V, +15 V
Latime
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
4.6mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.44mm
Typical Power Gain
17 dB
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


