Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
RF MOSFET
Channel Type
Type N
Operating Frequency
500 MHz
Maximum Continuous Drain Current Id
2.5A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerFLAT
Serie
PD55003L-E
Montare
Surface
Numar pini
14
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
150°C
Temperatura maxima de lucru
-65°C
Transistor Configuration
Single
Latime
5 mm
Inaltime
0.88mm
Lungime
5mm
Standards/Approvals
No
Typical Power Gain
19dB
Automotive Standard
No
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.
MOSFET Transistors, STMicroelectronics
Informatii despre stoc temporar indisponibile
€ 34,00
€ 6,80 Buc. (Livrat pe rola) (fara TVA)
€ 41,14
€ 8,23 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
5
€ 34,00
€ 6,80 Buc. (Livrat pe rola) (fara TVA)
€ 41,14
€ 8,23 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
5
| Cantitate | Pret unitar |
|---|---|
| 5 - 9 | € 6,80 |
| 10 - 24 | € 6,57 |
| 25 - 49 | € 6,33 |
| 50+ | € 6,10 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
STMicroelectronicsProduct Type
RF MOSFET
Channel Type
Type N
Operating Frequency
500 MHz
Maximum Continuous Drain Current Id
2.5A
Maximum Drain Source Voltage Vds
40V
Tip pachet
PowerFLAT
Serie
PD55003L-E
Montare
Surface
Numar pini
14
Channel Mode
Enhancement
Frecventa minima de auto-rezonanta
150°C
Temperatura maxima de lucru
-65°C
Transistor Configuration
Single
Latime
5 mm
Inaltime
0.88mm
Lungime
5mm
Standards/Approvals
No
Typical Power Gain
19dB
Automotive Standard
No
Detalii produs
RF MOSFET Transistors, STMicroelectronics
The Radio Frequency Transistors are LDMOS suitable for L-band satellite uplinks and DMOS power transistors in applications ranging from 1 MHz to 2 GHz.


