N-channel MOSFET,IRF640 18A 200V
Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Inaltime
15.75mm
Latime
4.6mm
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
P.O.A.
Buc. (Intr-un pachet de 5) (fara TVA)
5
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Documente tehnice
Specificatii
Marca
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
18 A
Maximum Drain Source Voltage
200 V
Tip pachet
TO-220
Timp montare
Through Hole
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
125 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Lungime
10.4mm
Typical Gate Charge @ Vgs
55 nC @ 10 V
Inaltime
15.75mm
Latime
4.6mm