Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Tip pachet
TSMT
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Inaltime
0.95mm
Tara de origine
Thailand
Detalii produs
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
P.O.A.
Buc. (Intr-un pachet de 15) (fara TVA)
15
P.O.A.
Buc. (Intr-un pachet de 15) (fara TVA)
15
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Documente tehnice
Specificatii
Marca
ROHMChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
45 V
Tip pachet
TSMT
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-21 V, +21 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Temperatura maxima de lucru
+150 °C
Latime
1.8mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
3mm
Inaltime
0.95mm
Tara de origine
Thailand
Detalii produs