Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
12 V
Serie
RAF040P01
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
800 mW
Maximum Gate Source Voltage
-8 V
Number of Elements per Chip
1
Latime
1.8mm
Lungime
2.1mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
0.82mm
Detalii produs
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
€ 28,00
€ 0,28 Buc. (Livrat pe rola) (fara TVA)
€ 33,32
€ 0,333 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 28,00
€ 0,28 Buc. (Livrat pe rola) (fara TVA)
€ 33,32
€ 0,333 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Rola |
---|---|---|
100 - 180 | € 0,28 | € 5,60 |
200 - 480 | € 0,23 | € 4,60 |
500 - 980 | € 0,22 | € 4,40 |
1000+ | € 0,21 | € 4,20 |
Documente tehnice
Specificatii
Marca
ROHMChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
12 V
Serie
RAF040P01
Tip pachet
SOT-323
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
68 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.3V
Maximum Power Dissipation
800 mW
Maximum Gate Source Voltage
-8 V
Number of Elements per Chip
1
Latime
1.8mm
Lungime
2.1mm
Typical Gate Charge @ Vgs
37 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
0.82mm
Detalii produs