Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TSMT-5
Montare
Surface Mount
Numar pini
5
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1.25W
Maximum Gate Source Voltage Vgs
-12/12 V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Transistor Configuration
Common Source
Latime
1.6 mm
Lungime
2.9mm
Inaltime
0.85mm
Number of Elements per Chip
2
Tara de origine
Japan
Detalii produs
Dual N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
Informatii despre stoc temporar indisponibile
€ 2,50
€ 0,25 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,02
€ 0,302 Buc. (Intr-un pachet de 10) (cu TVA)
10
€ 2,50
€ 0,25 Buc. (Intr-un pachet de 10) (fara TVA)
€ 3,02
€ 0,302 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
10
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TSMT-5
Montare
Surface Mount
Numar pini
5
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1.25W
Maximum Gate Source Voltage Vgs
-12/12 V
Temperatura minima de lucru
-55°C
Temperatura maxima de lucru
150°C
Transistor Configuration
Common Source
Latime
1.6 mm
Lungime
2.9mm
Inaltime
0.85mm
Number of Elements per Chip
2
Tara de origine
Japan
Detalii produs


