Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TSMT-5
Montare
Surface
Numar pini
5
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1.25W
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
12, -12V
Temperatura maxima de lucru
150°C
Transistor Configuration
Common Source
Lungime
2.9mm
Inaltime
0.85mm
Latime
1.6mm
Number of Elements per Chip
2
Tara de origine
Japan
Detalii Produs
Informatii despre stoc temporar indisponibile
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
10
P.O.A.
Buc. (Intr-un pachet de 10) (fara TVA)
Informatii despre stoc temporar indisponibile
10
Documente Tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
ROHMProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
2A
Maximum Drain Source Voltage Vds
30V
Tip pachet
TSMT-5
Montare
Surface
Numar pini
5
Channel Mode
Enhancement
Maximum Power Dissipation Pd
1.25W
Temperatura minima de lucru
-55°C
Maximum Gate Source Voltage Vgs
12, -12V
Temperatura maxima de lucru
150°C
Transistor Configuration
Common Source
Lungime
2.9mm
Inaltime
0.85mm
Latime
1.6mm
Number of Elements per Chip
2
Tara de origine
Japan
Detalii Produs