Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.25mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam
€ 14,40
€ 1,44 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,42
€ 1,742 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 14,40
€ 1,44 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,42
€ 1,742 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 1,44 | € 14,40 |
| 100 - 240 | € 1,23 | € 12,30 |
| 250+ | € 1,06 | € 10,60 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.25mm
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam


