Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.25mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam
€ 14,50
€ 1,45 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,54
€ 1,754 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 14,50
€ 1,45 Buc. (Intr-un pachet de 10) (fara TVA)
€ 17,54
€ 1,754 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
Cantitate | Pret unitar | Per Pachet |
---|---|---|
10 - 90 | € 1,45 | € 14,50 |
100 - 240 | € 1,24 | € 12,40 |
250+ | € 1,07 | € 10,70 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
83 A
Maximum Drain Source Voltage
40 V
Tip pachet
DPAK (TO-252)
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
4.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
6.22mm
Lungime
6.73mm
Typical Gate Charge @ Vgs
32 nC @ 10 V
Temperatura maxima de lucru
+175 °C
Inaltime
2.25mm
Frecventa minima de auto-rezonanta
-55 °C
Forward Diode Voltage
1.2V
Tara de origine
Vietnam