Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Inaltime
0.6mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 24,00
€ 0,24 Buc. (Livrat pe rola) (fara TVA)
€ 29,04
€ 0,29 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
100
€ 24,00
€ 0,24 Buc. (Livrat pe rola) (fara TVA)
€ 29,04
€ 0,29 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
100
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 100 - 225 | € 0,24 | € 6,00 |
| 250 - 475 | € 0,21 | € 5,25 |
| 500 - 975 | € 0,18 | € 4,50 |
| 1000+ | € 0,16 | € 4,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
950 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-563
Montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
240 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
210 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
1.7mm
Typical Gate Charge @ Vgs
5.6 nC @ 4.5 V
Inaltime
0.6mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


