Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-963
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Latime
0.85mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
1.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.4mm
Temperatura minima de lucru
-55 °C
Detalii produs
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 11,75
€ 0,47 Buc. (Livrat pe rola) (fara TVA)
€ 13,98
€ 0,559 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
€ 11,75
€ 0,47 Buc. (Livrat pe rola) (fara TVA)
€ 13,98
€ 0,559 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
25
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Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
280 mA
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-963
Timp montare
Surface Mount
Numar pini
6
Maximum Drain Source Resistance
4.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
200 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Latime
0.85mm
Transistor Material
Si
Number of Elements per Chip
2
Lungime
1.05mm
Temperatura maxima de lucru
+150 °C
Inaltime
0.4mm
Temperatura minima de lucru
-55 °C
Detalii produs