Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 3,00
€ 0,12 Buc. (Intr-un pachet de 25) (fara TVA)
€ 3,63
€ 0,145 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 3,00
€ 0,12 Buc. (Intr-un pachet de 25) (fara TVA)
€ 3,63
€ 0,145 Buc. (Intr-un pachet de 25) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
25
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 25 - 75 | € 0,12 | € 3,00 |
| 100 - 225 | € 0,11 | € 2,75 |
| 250 - 475 | € 0,09 | € 2,25 |
| 500 - 975 | € 0,08 | € 2,00 |
| 1000+ | € 0,07 | € 1,75 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
8 V
Tip pachet
SOT-323
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
210 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.45V
Maximum Power Dissipation
330 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Temperatura maxima de lucru
+150 °C
Latime
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 5 V
Inaltime
0.9mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


