Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Latime
1.3mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 2,10
€ 0,21 Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,54
€ 0,254 Buc. (Intr-un pachet de 10) (cu TVA)
Standard
10
€ 2,10
€ 0,21 Buc. (Intr-un pachet de 10) (fara TVA)
€ 2,54
€ 0,254 Buc. (Intr-un pachet de 10) (cu TVA)
Informatii despre stoc temporar indisponibile
Standard
10
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Pachet |
|---|---|---|
| 10 - 90 | € 0,21 | € 2,10 |
| 100 - 240 | € 0,18 | € 1,80 |
| 250 - 490 | € 0,15 | € 1,50 |
| 500 - 990 | € 0,13 | € 1,30 |
| 1000+ | € 0,12 | € 1,20 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Latime
1.3mm
Lungime
2.9mm
Typical Gate Charge @ Vgs
6 nC @ 10 V
Number of Elements per Chip
1
Temperatura maxima de lucru
+150 °C
Frecventa minima de auto-rezonanta
-55 °C
Inaltime
1mm
Detalii produs


