Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 5,00
€ 0,25 Buc. (Livrat pe rola) (fara TVA)
€ 6,05
€ 0,302 Buc. (Livrat pe rola) (cu TVA)
Impachetare pentru productie (Rola)
20
€ 5,00
€ 0,25 Buc. (Livrat pe rola) (fara TVA)
€ 6,05
€ 0,302 Buc. (Livrat pe rola) (cu TVA)
Informatii despre stoc temporar indisponibile
Impachetare pentru productie (Rola)
20
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 20 - 198 | € 0,25 | € 0,50 |
| 200 - 998 | € 0,22 | € 0,44 |
| 1000 - 1998 | € 0,19 | € 0,38 |
| 2000+ | € 0,18 | € 0,36 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
180 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Latime
1.3mm
Transistor Material
Si
Number of Elements per Chip
1
Lungime
2.9mm
Typical Gate Charge @ Vgs
2.5 nC @ 5 V
Temperatura maxima de lucru
+150 °C
Inaltime
0.94mm
Frecventa minima de auto-rezonanta
-55 °C
Detalii produs


