Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+12 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Inaltime
1.01mm
Automotive Standard
AEC-Q101
€ 240,00
€ 0,08 Buc. (Pe o rola de 3000) (fara TVA)
€ 290,40
€ 0,097 Buc. (Pe o rola de 3000) (cu TVA)
3000
€ 240,00
€ 0,08 Buc. (Pe o rola de 3000) (fara TVA)
€ 290,40
€ 0,097 Buc. (Pe o rola de 3000) (cu TVA)
Informatii despre stoc temporar indisponibile
3000
Informatii despre stoc temporar indisponibile
| Cantitate | Pret unitar | Per Rola |
|---|---|---|
| 3000 - 3000 | € 0,08 | € 240,00 |
| 6000 - 9000 | € 0,08 | € 240,00 |
| 12000 - 15000 | € 0,07 | € 210,00 |
| 18000 - 21000 | € 0,07 | € 210,00 |
| 24000+ | € 0,07 | € 210,00 |
Documente tehnice (Imaginile sunt cu titlu informativ. Va rugam sa consultati specificatiile tehnice.)
Specificatii
Marca
onsemiChannel Type
P
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Tip pachet
SOT-23
Timp montare
Surface Mount
Numar pini
3
Maximum Drain Source Resistance
350 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.25V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
400 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+12 V
Number of Elements per Chip
1
Latime
1.4mm
Lungime
3.04mm
Typical Gate Charge @ Vgs
3.1 nC @ 4.5 V
Temperatura maxima de lucru
+150 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1V
Inaltime
1.01mm
Automotive Standard
AEC-Q101


