Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
16 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.15mm
€ 33,25
€ 1,33 Buc. (Intr-un pachet de 25) (fara TVA)
€ 39,57
€ 1,583 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
€ 33,25
€ 1,33 Buc. (Intr-un pachet de 25) (fara TVA)
€ 39,57
€ 1,583 Buc. (Intr-un pachet de 25) (cu TVA)
Standard
25
Informatii despre stoc temporar indisponibile
Incercati din nou mai tarziu
Cantitate | Pret unitar | Per Pachet |
---|---|---|
25 - 75 | € 1,33 | € 33,25 |
100 - 225 | € 1,14 | € 28,50 |
250+ | € 0,98 | € 24,50 |
Documente tehnice
Specificatii
Marca
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
40 V
Tip pachet
LFPAK, SOT-669
Timp montare
Surface Mount
Numar pini
4
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Latime
4.25mm
Lungime
5mm
Typical Gate Charge @ Vgs
16 @ 10 V nC
Temperatura maxima de lucru
+175 °C
Temperatura minima de lucru
-55 °C
Forward Diode Voltage
1.2V
Inaltime
1.15mm